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| SFH 314 SFH 314 FA . eu: NPN-Silizium-Fototransistor N New: Silicon NPN Phototransistor SFH 314 SFH 314 FA 0.6 0.4 2.54 mm spacing 0.8 0.4 Area not flat 6.9 6.1 5.7 5.5 o5.1 o4.8 5.9 5.5 1.8 1.2 29.5 27.5 Cathode (Diode) Collector (Transistor) Approx. weight 0.4 g 4.0 3.4 Chip position 0.6 0.4 GEX06630 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Features q Especially suitable for applications from Bereich von 460 nm bis 1080 nm (SFH 314) und bei 880 nm (SFH 314 FA) q Hohe Linearitat q 5 mm-Plastikbauform Anwendungen q Computer-Blitzlichtgerate q Lichtschranken fur Gleich- und 460 nm to 1080 nm (SFH 314) and of 880 nm (SFH 314 FA) q High linearity q 5 mm plastic package Applications q q q q Wechsellichtbetrieb q Industrieelektronik q "Messen/Steuern/Regeln" Computer-controlled flashes Photointerrupters Industrial electronics For control and drive circuits Semiconductor Group 1 1997-11-27 feof6652 feo06652 SFH 314 SFH 314 FA Typ Type SFH 314 SFH 314-2 SFH 314-3 SFH 314 FA SFH 314 FA-2 SFH 314 FA-3 Bestellnummer Ordering Code Q62702-P1668 Q62702-P1755 Q62702-P1756 Q62702-P1675 Q62702-P1757 Q62702-P1758 Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur bei Tauchlotung Lotstelle 2 mm vom Gehause, Lotzeit t 5 s Dip soldering temperature 2 mm distance from case bottom, soldering time t 5 s Lottemperatur bei Kolbenlotung Lotstelle 2 mm vom Gehause, Lotzeit t 3 s Iron soldering temperature 2 mm distance from case bottom t 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Emitter-Kollektorspannung Emitter-collector voltage Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value - 55 ... + 100 260 Einheit Unit C C Top; Tstg TS TS 300 C VCE IC ICS VEC Ptot RthJA 70 50 100 7 200 375 V mA mA V mW K/W Semiconductor Group 2 1997-11-27 SFH 314 SFH 314 FA Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Kapazitat, VCE = 0 V, f = 1 MHz, E = 0 Capacitance Dunkelstrom Dark current VCE = 10 V, E = 0 Fotostrom, Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCE = 5 V Symbol Symbol SFH 314 S max 850 Wert Value SFH 314 FA 870 nm Einheit Unit 460 ... 1080 740 ... 1080 nm A LxB LxW H 0.55 1x1 3.4 ... 4.0 0.55 1x1 3.4 ... 4.0 mm2 mm x mm mm 40 15 10 ( 200) 40 15 10 ( 200) Grad deg. pF nA CCE ICEO IPCE IPCE 0.63 7 0.63 - mA mA Semiconductor Group 3 1997-11-27 SFH 314 SFH 314 FA Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Description Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V SFH 314: Ev = 1000 Ix, Normlicht/ standard light A, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-EmitterSattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.5 mW/cm2 1) 1) Symbol Symbol -1 -2 Wert Value -3 -4 Einheit Unit IPCE IPCE tr, tf 0.63 ... 1.25 1 ... 2 3.4 8 5.4 10 1.6 ... 3.2 8.6 12 2.5 13.5 14 mA mA s VCEsat 150 150 150 150 mV IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe IPCEmin is the min. photocurrent of the specified group Directional characteristics Srel = f () 40 30 20 10 0 1.0 OHF02329 50 0.8 60 0.6 70 0.4 80 90 0.2 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 4 1997-11-27 SFH 314 SFH 314 FA TA = 25 C, = 950 nm Rel. spectral sensitivity SFH 314 Srel = f () Rel. spectr.sensitivity SFH 314 FA,Srel = f() Dark current ICEO = f (VCE), E = 0 100 OHF02332 100 OHF02331 S rel % 80 70 60 50 40 30 20 10 0 400 500 600 700 800 900 nm 1100 S rel % 80 70 60 50 40 30 20 10 0 CEO 10 2 nA OHF02341 10 1 10 0 10 -1 10 -2 400 500 600 700 800 900 nm 1100 0 10 20 30 40 50 V 70 V CE Photocurrent IPCE = f (TA), VCE = 5 V, normalized to 25 oC PCE 25 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -25 Photocurrent IPCE = f (Ee), VCE = 5 V OHF01524 Collector-emitter capacitance CCE = f (VCE), f = 1 MHz OHF02339 PCE 1.6 PCE 10 1 mA 50 OHF02344 C CE pF 40 10 0 30 10 -1 20 10 -2 10 0 25 50 75 C 100 TA 10 -3 -3 10 10 -2 mW/cm 2 Ee 10 0 0 -2 10 10 -1 10 0 10 1 V 10 2 VCE Photocurrent IPCE = f (VCE), Ee = parameter PCE 10 1 mA OHF02338 Total power dissipation Ptot = f (TA) Ptot 250 mW 200 OHF02340 Dark current ICEO = f (TA), VCE = 10 V, E = 0 CEO 10 2 nA OHF02342 1 mW cm 2 mW 0.5 cm 2 mW cm 2 10 1 150 0.25 10 0 10 0 mW 0.1 cm 2 100 10 -1 50 10 -1 0 10 20 30 40 50 V 70 VCE 0 0 20 40 60 80 C 100 TA 10 -2 0 20 40 60 80 C 100 TA Semiconductor Group 5 1997-11-27 |
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